Growth condition dependence of RHEED pattern from GaAs(111)B surface

A 3-dimensional phase diagram is introduced to describe the dependence of the RHEED pattern from GaAS (111)B surface on growth conditions. The 2 {times} 2, transitional (1 {times} 1), and {radical}19 {times} {radical}19 surface reconstructions correspond to different zones in the phase diagram. A equation is given for the planes that separate these zones, which fit experimental data well. Homoepitaxial films on GaAs(111)B grown in the 2 {times} 2 region generally have bad crystal quality as determined by the ion channeling, and growth in the {radical}19 {radical}19 region generally yields rough surface morphology. At higher substrate temperatures ({approximately} 650{degrees}C), featureless films with minimum ion channeling yields of less than 4% are achieved. 13 refs., 6 figs.