Dielectric and electrical properties of zinc doped titanium oxide (TiO2) synthesized by semi-wet route

Zinc doped titanium oxide (Ti1-xZnxO2, x=0.05) abbreviated as Ti0.95 Zn0.05O2 (TZO) ceramic was synthesized by semiwet route using aqueous solution of zinc acetate dihydrate and solid titanium dioxide as starting materials. The single phase formation of the TZO ceramic sintered at 900 °C for 8 h was confirmed by powder X-ray diffraction (XRD) analysis. The lattice parameters obtained by Retvield refinement were found to be a=b= 4.609 A, c= 2.967A and α=β= γ= 90 ° with space group P 42/m n m confirmed the rhombic structure of TZO ceramic. The average particle size of the TZO ceramic observed by TEM analysis was found to be 84 nm. The surface morphologies and roughness parameters of TZO ceramic were observed by atomic force microscopy (AFM) analysis. The value of dielectric constant (e′) and tangent loss (tan δ) of the TZO ceramic were found to be 230 and 0.2, respectively at 100 Hz and 498 K.