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Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers
Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers
2019
Daniel J. Lichtenwalner
Shadi Sabri
Edward Van Brunt
Brett Hull
Satyaki Ganguly
Donald A. Gajewski
Scott Allen
John W. Palmour
Keywords:
Wafer
Gate oxide
MOSFET
Composite material
Optoelectronics
Materials science
Silicon carbide
Capacitor
Time-dependent gate oxide breakdown
Correction
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