DC field dependent properties of Na0.5K0.5NbO3/SiO2/Si structures at millimeter-wave frequencies

Dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Ω cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 ...