Reactor for hydride vapour phase epitaxy (HVPE)

The invention discloses a reactor for vertical hydride vapour phase epitaxy (HVPE), which comprises an axisymmetric cylindrical cavity, a precursor channel, a substrate, a graphite disc and a support bar, wherein the precursor channel, from top to bottom, is sequentially composed of a first cylinder, a transition section, a second cylinder, a skirt extension section and a third cylinder; the reactor also comprises a second rectifying plate and a first baffling device, wherein the second rectifying plate is arranged at the central position of the second cylinder, and the first baffling device is arranged in the third cylinder and provided with a circumferential array baffling plate; or the reactor also comprises first, second and third rectifying plates and a second baffling device, wherein the first, second and third rectifying plates are respectively arranged in the first, second and third cylinders of the channel, and the second baffling device is arranged at the radial periphery of the graphite disc; or the reactor also comprises a part for carrying out radial expansion on the outer wall of a reactive cavity; or the reactor comprises first and second rectifying plates, first and second baffling devices, and a radial outlet for reaction gas, wherein the first and second rectifying plates are arranged in the first and second cylinders, and the first and second baffling devices are arranged in the third cylinder and connected with the radial periphery of the graphite disc.