High transconductance nitride MOSHFETs

Abstract AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were fabricated with photo-chemical vapor deposited (photo-CVD) oxide as the insulating layer. It was found that room temperature saturation I ds , maximum g m and gate voltage swing (GVS) of the devices were 1220 mA/mm, 240 mS/mm and 4.5 V, respectively. It was also found that we could still achieve a maximum transconductance of 180 mS/mm at 300 °C.