Comprehensive study on hot carrier reliability of radiation hardened H-gate PD SOI NMOSFET after gamma radiation
2019
ABSTRACTThe authors perform gamma ray irradiation and hot carrier stress on RH H-Gate PD (partially depleted) SOI NMOSFETs as the experimental group and commercial strip-shaped gate PD SOI NMOSFETs...
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
10
References
1
Citations
NaN
KQI