Molecular beam epitaxy of BaF 2 /CaF 2 buffer layers on the Si(100) substrate for monolithic photoreceivers

This paper describes the study of the surface morphology of BaF2 epitaxial films grown by means of molecular beam epitaxy in various growth regimes on a CaF2/Si(100) surface, which is performed by means of atomic force microscopy. The CaF2 layers were obtained on a Si(100) substrate in a low-temperature growth regime (T s = 500 °C). The technological regimes of growth of BaF2 continuous films with a smooth surface on CaF2/Si(100), suitable as buffer layers for the subsequent growth of PbSnTe layers or other semiconductors, such as A4B6, and solid solutions based on them.