Structural, optical and electrical properties of PbxCd1−xS films obtained by CBD

2011 
PbxCd1−xS films have been prepared with the composition range 0.05≤x≤0.25, using an optimized chemical bath deposition growth technique. X‐ray diffraction results show that the film's composition is PbS‐CdS with individual CdS and PbS planes. X‐ray patterns indicate that the preferred orientation changes from (111) CdS to (111) PbS for 20% Pb. The structural dependence of the absorption coefficient is consistent with the predictions of the XRD experiments. Band gap energy decreases from 2.13 eV to 1.25 eV when Pb percentage increases from 0.05 to 0.25. resistivity and Hall effect measurements indicate that 20% Pb is the optimum percentage to get p‐type PbxCd1−xS films with the highest hole concentration (3.57×1012 cm−3).
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