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Improvement of Breakdown Voltage of AlGaN/GaN HEMT
Improvement of Breakdown Voltage of AlGaN/GaN HEMT
2006
Nakata Ken
Kawasaki Takeshi
Matsuda Keita
Igarashi Takeshi
Yaegashi Seiji
Keywords:
Optoelectronics
Breakdown voltage
High-electron-mobility transistor
Materials science
algan gan
Correction
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