(n, γ)-Induced point defects in InP and InSb studied by β-radiation detected nuclear magnetic resonance

Polarized116In (I=1,T1/2=14.1 s) nuclei were produced by capture of polarized thermal neutrons in undoped InP and InSb and in InSb∶Te single crystals. As a consequence of the nuclear reaction charged and paramagnetic point defects were produced with a rate of about 0.8 per absorbed neutron. Spin-lattice relaxation rates of the116In probe nuclei were measured at temperatures between 1.3 K and 90 K, as well as NMR line profiles and magnetic field dependences of the nuclear polarization up to 0.63 T. Electric field gradients, produced by the defects, could be determined, and defect induced additional relaxation processes were observed. Further, characteristic phonon frequencies and spin-phonon coupling constants for the undisturbed crystal lattices could be derived.