Growth of BiYIG films from MoO 3 –containing fluxes

For liquid phase epitaxial (LPE) growth of BiYIG films, MoO 3 is shown to be a flux modifier that increases Bi content x Bi , and growth-induced anisotropy K u 8 , for MoO 3 flux concentrations up to 12 mol %. The addition of MoO 3 to PbO–Bi 2 O 3 fluxed garnet melts caused the saturation temperature to increase at a rate of 7 deg/mol % while growth rates decreased. For a given amount of supercooling, Δ T s , x Bi increased with MoO 3 flux content up to 12 mol %. A linear dependence of x Bi on Δ T s , was observed for all MoO 3 concentration levels. The anisotropy increased both with supercooling and with MoO 3 flux concentration. The K g u can be represented by a two-variable model, K g u = A + Bx Bi + C 4II M s , where B increases from 143–213 kerg/cm 3 per Bi atom per formula unit as the MoO 3 content of the flux increases from 0–12 mol %. The density of the melt decreases with increased MoO 3 content. A melt based on a 15 mol % MoO 3 flux is less dense than gadolinium gallium garnet.