Al doped ZnO thin films for gas sensor application

Highly textured pure and Al doped ZnO thin films have been produced by pulsed laser deposition for optical gas sensor application. The influence of the processing parameters such as substrate temperature and oxygen pressure applied during depositions, and dopant concentration on the structural, morphological, and optical properties of the films were investigated. All deposited films are textured along the (002) direction. The substrate temperature and the oxygen pressure have stronger influence on the film crystallinity compared to the presence of the dopants. The grain size of the films prepared from 2 wt% Al2O3 doped ZnO target is approximately the same as the one produced from pure ZnO tagret. The increase in the dopant concentration into the ZnO target (to 5 wt% Al2O3) leads to an increase of the in-plane grain size of the as-deposited films which is well known to increase the gas sensitivity. At the same time, the use of doped targets increase the droplets on the film surface which deteriorates the optical detection of the gas sensing effect. The increase of the dopant concentration reduces the film transmission in the visible range and the transmission cut-off edge is shifted to the shorter wavelengths. The films deposited from 2 wt% Al2O3 doped ZnO target at oxygen pressure of 0.05 mbar and 300°C substrate temperature have good mode properties which makes them good candidates for optical sensors.