Long-lived excited state of Te donors in GaP

The kinetics of the photoresponses in constant and microwave electric fields and the variation of the absorption of background radiation in GaP doped with Te (2×1017 cm−3) upon impurity excitation at 5–50 K are investigated. The lifetime of the excited state of the Te donors is determined (∼10−2 s). It is shown that the results presented are consistent with the model of carrier accumulation in long-lived impurity excited states in semiconductors. These results are compared with the results previously obtained for diamond-structure semiconductors.