Intermediate triggering negative-pressure-resistant SCR (silicon controlled rectifier) device, technical method and application circuit

The invention is suitable for the field of semiconductor devices, and provides an intermediate triggering negative-pressure-resistant SCR (silicon controlled rectifier) device, a technical method and an ESD (electro-static discharge) application circuit. The structure comprises a substructure, a first deep injection well formed in the substrate, a first active region formed in the first deep injection well, a second deep injection well formed in the substrate, a second active region formed in the second deep injection well, a first active region formed in the second deep injection well, a first well formed in the second deep injection well to form an intersection, a first active region formed by simultaneous injection into the two wells at the intersection between the first well and the second deep injection well, a second active region formed in the first well, and a first active region formed in the first well. According to the SCR device which can resist negative pressure and has intermediate triggering voltage, the triggering voltage of the SCR device can be reduced to be lower than the puncture voltage of a gate oxide layer in a chip, so that the effective design requirement on ESD protection is met.