CMOS devices and circuits for microwave and millimeter wave applications

Recent results on characterization, modelling and circuit design based on 90/130 nm CMOS is presented in this paper. Amplifiers, frequency multipliers, and mixers were realized for frequencies up to 60 GHz. Circuit results based on two different transmission line approaches are reported. Load-pull characterization of transistors at 9 GHz and 23 GHz are also reported with 250mW/mm and 150 mW/mm output power for a 90 nm and 130 nm CMOS technology respectively. Initial studies of FINFETs promise feasibility of analogue circuits up to millimetre wave frequencies.