Semiconductor silicon wafer manufacture process

The invention discloses a semiconductor silicon wafer manufacture process which comprises the steps of: 1, carrying out double-side rough polishing on the silicon wafer after grinding and corroding, wherein the removal amount is 5-100 micrometers; 2, after double-side rough polishing, carrying out double-side medium polishing, wherein the hardness of polishing cloth or the grain size of grains of a polishing solution is less than that of the rough polishing, and the polishing removal amount is 1-100 micrometers; and 3, directly carrying out single-face final polishing on the silicon wafer subjected to the double-sidepolishing, wherein the polishing removal amount is less than 0.5 micrometer. The silicon wafer with high planeness can be obtained by the process, and the once yield of the product is improved. The invention has the advantage of providing a manufacture method of the large-size silicon wafer for improving the geometric parameter level of the silicon wafer surface.