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Electrical Characteristics of Gated-Anode Diodes using GaN HEMT with Recessed Gate Structure
Electrical Characteristics of Gated-Anode Diodes using GaN HEMT with Recessed Gate Structure
2021
Hidemasa Takahashi
Yuji Ando
Momoe Shojima
Akio Wakejima
Jun Suda
Keywords:
Diode
Anode
High-electron-mobility transistor
Materials science
Optoelectronics
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