Mask used for continuous side direction crystal growing technology and laser crystallization method

The invention provides a mask applied in continuous lateral grain growing technology and a laser crystallization method. The mask comprises a first photic unit and a second photic unit. The first photic unit is provided with a plurality of round photic zones. The second photic unit is arranged beside the first photic unit and is provided with a plurality of polygon shading zones. The polygon shading zones are arranged corresponding to the round photic zones of the first photic unit and the length of the diagonal of each polygon shading zone is smaller than the diameter of each round photic zone. The method comprises the following steps of: using laser to penetrate the mask and produce a second crystallization unit and a first crystallization unit which is corresponding to the first photicunit, moving the mask to make the first photic unit to be corresponding to the second crystallization unit and making the laser penetrate the mask and produce a second crystallization zone on the substrate.