Laser emission efficiency of semiconductor target of gas diode in the picosecond range

Laser radiation excited in a cadmiumsulfide semiconductor target (ST) (λ = 522 nm) by a high-intensity subnanosecond electron beam (EB) with an energy of 70–150 keV has a maximum intensity of 3 · 107W/cm2 at an efficiency of~10%. Lasing arose at the EB exciting pulse front. The laser radiation pulse shape reproduced the EB pulse shape.