A method of forming a semiconductor structure, the silicided and non-silicided circuit elements comprises

A method includes providing a semiconductor structure comprising at least a first circuit element and at least a second circuit element. The first circuit element includes a first semiconductor material and the second circuit element includes a second semiconductor material. A dielectric layer having an intrinsic elastic stress is formed. The dielectric layer comprises a first part on said at least first circuit element and a second part on the at least one second circuit element. It is carried out a first heat treatment process. In the first heat treatment process, a intrinsic elastic stress is generated at least in the first semiconductor material by a voltage-memory effect. After the first heat treatment process, the first part of the dielectric layer is removed. It is a layer formed of a metal and a second heat treatment process is performed. In the second heat treatment process, the metal and the first semiconductor material chemically react and form a silicide. The second part of the dielectric layer substantially prevents a chemical reaction between the second semiconductor material and the metal.