TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain

A physics-based TCAD framework is used to estimate the interface trap generation (ΔN IT ) during Negative Bias Temperature Instability (NBTI) stress in P-channel FinFET and Gate All Around (GAA) Nano-Sheet (NS) FET. The impact of mechanical strain due to channel length scaling (L CH ) on ΔN IT generation is estimated. The bandstructure calculations are used to explain the impact of mechanical strain on ΔN IT generation.