Anodic Oxidation of Al Films on Si by Microwave Excited Oxygen Plasma
1984
The oxidation of evaporated Al thin films on Si (100) was studied by microwave excited oxygen plasma. The effect of oxidation conditions, including the substrate temperature and the substrate-cathode spacing, on the structual characteristics of films was examined. Under an appropriate substrate temperature, amorphous and insulating films were formed.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
1
Citations
NaN
KQI