Carrier conduction in a-Si:H solar cells

The conduction process in a-Si:H Schottky structures (I-N+/SS) is found to be barrier controlled at low forward bias ( 0.6 V). The I-layer shows evidence of space charge limited current conduction (SCLC) in the dark. A model incorporating these considerations has been presented to develop equations for the terminal I-V characteristics of these structures. Dark I-V characteristics of the P-I-N structure are also explained on the basis of the above model. Dark C-V-f characteristics of the Schottky structures also support the existence of SCLC conduction in these structures.