Residual impurities originating from AsH3 in GS-MBE grown GaAs

Abstract The dependence of residual impurities in GS-MBE grown GaAs on cracking temperature and differences between batches of AsH 3 has been studied. Samples were characterized using Hall measurement, photoluminescence and SIMS analysis. Silicon and sulfur were identified as dominant residual donors, and these impurities were concluded to come from gaseous impurities in AsH 3 . The residual donor concentration and the dominant donor species were found to depend mainly on differences between batches of AsH 3 , reflecting differences in methods used to produce and purify AsH 3 .