Coherent Magnetic Switching in a Permalloy Submicron Junction

This work provides a numerical micromagnetic study of the magnetic switching of a submicron magnetic junction in a Permalloy (Ni80Fe20) cross structure. The simulation results demonstrate that the magnetic domain at the junction can be controlled to switch coherently by the applied magnetic field. This coherent magnetic switching in the cross structure has been found to be reversible and the 2-bit information can be written in the magnetic junction. For information storage, this kind of device can also realize the function of a quaternary arithmetic unit. By varying the direction of the applied magnetic field, we have demonstrated that this magnetic junction could be the building block for a magnetoresistive random access memory (MRAM) or a quaternary magnetic arithmetic unit.