High performance type II superlattice photo diodes for long wavelength infrared applications
2011
In this paper we report improved device performance for type II superlattice (SL) photo
diodes by inserting a graded AlGaSb barrier layer inserted into the depletion region of the
PIN diode to suppress dark current and employing SiO 2 as a passivation layer. The I-V
characteristics shows presence of AlGaSb barrier layer in the device structure increased
R0A values by up to a factor of 40 times. Sidewall resistivity was increased by an order
of magnitude with SiO 2 passivation. The fabricated photo diode with λ c =12.8-μm shows
peak responsivity of 3.7 A/W at 10.6 μm and Johnson noise limited peak detectivity of
1×10 11 cmHz 1/2 /W under zero bias at 83 K under 300 K background radiation with a 2π
field-of-view.
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