Implementation of enhanced data reading for multilevel cells - or MLC - memory using compared to threshold voltage drift or resistance drift tolerant storage data coding with flexible baseline

There are provided a method and an apparatus for the implementation of an extended data reading for Mehrpegelzellen- or MLC memory using compared to threshold voltage drift or resistance drift tolerant memory data encoding with movable base line. It is carried out a data read-back for viewing in the MLC memory data using compared to threshold voltage drift or resistance drift tolerant memory data encoding with movable base line are compared, higher and lower voltage levels and corresponding data values ​​are identified in response to the compared higher and lower voltage level.