Design of a silicon carbide semiconductor device, a method for manufacturing a silicon carbide semiconductor device and a silicon carbide semiconductor device

Silicon carbide semiconductor device comprising: a first conductivity type silicon carbide layer 32, a second conductivity type silicon carbide layer 36, the gate trench 20, the gate electrode is disposed within the gate trench 20 is 79, and the gate until the ratio of groove protection trench groove 20 is formed at a deeper depth of 10. In the horizontal direction, including the gate trenches 20, and both the protection area of ​​the trench in a state opening the gate trench 20 is at least partially surrounded in the horizontal direction becomes 10 units (cell) area, in the horizontal direction, comprising a protective groove 10 and is provided with a gate electrode region arranged with the pads 89 or the gate pad 89 is connected to the gate region becomes. It is included in the protective trench cell region 10 having a plurality of cell regions rectilinear grooves extending in the horizontal direction of the straight line 11. Furthermore, cell regions in the horizontal direction linear grooves 11 than is included in the protected trench gate region of the maximum horizontal distance D 10 the distance D is longer.