Electric parameter evolutions against gatelength and bias in ultrashort gate AlGaAs/GaAs HEMTs

The electric parameter evolutions of state of the art ultrashort gate planar doped AlGaAs/GaAs HEMTs are studied against gatelength l/sub g/=0.4-0.1 mu m and bias. The best value of maximum intrinsic transconductance obtained is g/sub m0max/=800 mS/mm at l/sub g/=0.15 mu m and the measured cutoff frequency is f/sub t/=125 GHz at l/sub g/=0.1 mu m.