200 V Fast Recovery Epitaxial Diode with superior ESD capability

Abstract In this paper the Electrostatic Discharge (ESD) capability of 200 V Fast Recovery Epitaxial Diodes (FREDs) is analysed by means of suitable experiments, TCAD simulations and theoretical analyses. Different doping profiles are investigated in order to improve the ESD robustness of a standard device and an optimized doping profile is proposed. The newly fabricated devices show a remarkably high ESD capability without any significative loss in forward voltage drop and a reduction of the breakdown voltage that does not affect device rating.