Formation of Ge0 and GeOx nanoclusters in Ge+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing

Abstract The results of X-ray photoelectron spectra (XPS valence band and core levels) measurements for Ge + implanted SiO 2 /Si heterostructures are presented. These heterostructures have a 30 nm thick Ge + ion implanted amorphous SiO 2 layer on p-type Si. The chemical-state transformation of the host-matrix composition after Ge + ion implantation and rapid thermal annealing (RTA) are discussed. The XPS-analysis performed allows to conclude the formation of Ge 0 and GeO x clusters within the samples under study. It was established, that the annealing time strongly affects the degree of oxidation states of Ge-atoms.