Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

Jingnan Gao,Yufeng Jin,Yilong Hao,Bing Xie,Cheng P. Wen,Bo Shen,Maojun Wang

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

2018

Jingnan Gao
Yufeng Jin
Yilong Hao
Bing Xie
Cheng P. Wen
Bo Shen
Maojun Wang

National Key Research and Development Program of China [2017YFB0403000, 2016YFB0400200]; National Natural Science Foundation of China [11634002, 61774002]

Keywords:

Engineering physics
Chemical vapor deposition
Agroforestry
High voltage
Passivation
Etching (microfabrication)
Biology

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