Design for manufacture to deal with mask-induced critical dimension errors in the extreme ultraviolet

Abstract. The actual extreme ultraviolet lithography tools will have ab-errations around seven times larger than those of the latest ArF lithogra-phy tools in wavelength normalized rms. We calculated the influence ofaberrations on the size error and pattern shift error using Zernike sensi-tivity analysis. Mask-induced aberration restricts the specification of ab-erration. Without periodic additional pattern, the aberration level that canbe accepted to form 22 nm dual-gate patterns was 8m rms. Arrang-ing the periodic additional pattern relaxed the aberration tolerance. Withperiodic additional pattern, the acceptable aberration level to form 22 nmpatterns was below 37 m rms. It is important to make pattern period-icity for the relaxation of the aberration specification. © 2010 Society of Photo-Optical Instrumentation Engineers. DOI: 10.1117/1.3421948 Subject terms: EUV lithography; aberration tolerance; Zernike sensitivity; maskinduced CD errors; design for manufacture . Paper 09085PRR received Apr. 25, 2009; revised manuscript received Feb. 26,2010; accepted for publication Mar. 22, 2010; published online May 27, 2010.