Method and device for producing of silicon carbide crystals

A method of growing silicon carbide crystalline material, the method comprising: Introducing a silicon carbide seed crystal into a silicon carbide growth chamber, the silicon carbide seed crystal has a first silicon carbide growth surface with a first growth plane for supporting the growth of a silicon carbide crystal from a silicon carbide source material in a first crystallographic direction corresponding first to the having growth plane, Introducing a plurality of silicon carbide crystal growth dividers in the silicon carbide growth chamber, said dividers having opposing surfaces oriented substantially perpendicular to said first growth surface, wherein said dividers are spaced apart to define a plurality of passages between the dividers of a size sufficient to form therebetween to permit the growth of silicon carbide, Supplying a silicon carbide source material into the chamber, and Growth of silicon carbide crystalline material on the first growth surface in the first crystallographic direction into said passages to form a plurality of silicon carbide crystals having opposing surfaces that are substantially perpendicular to said first growth surface, wherein the opposite surfaces of the silicon carbide crystal, a ...