High-sensitivity switched-current sensing circuit for magnetic tunnel junction MRAM
2003
A high-sensitivity switched-current sensing circuit for reading data non-destructively from 1T-1MTJ magneto-resistive random access memory (MRAM) is presented. Compared to the existing sensing circuits at a power supply of 3.0V, simulation results showed that the read access time and the power consumption are about 3 times faster and smaller
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