THz Generation Control in Fe/X Spintronic Multilayers by chemical bonding at epitaxial Fe/GaAs(001) interfaces

Roman Adam,Genyu Chen,Daniel E. Bürgler,Derang Cao,Sarah Heidtfeld,Debamitra Chakraborty,Jing Cheng,Ivan Komissarov,Hilde Hardtdegen,M. Mikulics,Claus M. Schneider,Roman Sobolewski

THz Generation Control in Fe/X Spintronic Multilayers by chemical bonding at epitaxial Fe/GaAs(001) interfaces

2021

Roman Adam
Genyu Chen
Daniel E. Bürgler
Derang Cao
Sarah Heidtfeld
Debamitra Chakraborty
Jing Cheng
Ivan Komissarov
Hilde Hardtdegen
M. Mikulics
Claus M. Schneider
Roman Sobolewski

We report an additional degree of control of THz transients in Fe/X spintronic emitters grown on GaAs(001). We ascribe the field-independent enhancement of the THz amplitude to specific chemical bonding at the epitaxial Fe/GaAs(001) interface.

Keywords:

Magnetic field
Spintronics
Materials science
Chemical bond
Epitaxy
Electromagnetic radiation
Terahertz radiation
Optoelectronics
Gallium arsenide

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