Influence of Channel Thickness on Analog and RF Performance Enhancement of an Underlap DG AlGaN/GaN based MOS-HEMT Device

This paper elucidates a comprehensive, illustrative and qualitative study on the Analog and RF performance of an Underlapped Double-Gate (U-DG) AlGaN/GaN heterojunction-based MOS-HEMT device with Hafnium-based high-k dielectric gate material. This paper presents the effect of GaN channel thickness variation on the drain current $\pmb{(I_{d})}$ , the transconductance $(g_{m})$ , output resistance $\pmb{(R_o)}$ , the intrinsic gain $\pmb{(g_{m}R_{o})}$ , transconductance generation factor $(g_{m}/I_{d})$ and the RF FOMs- total intrinsic gate capacitance $(C_{gg})$ and cut-off frequency $(f_{T})$ . These hetero-structured devices show superior performance as power transistors due to its enhanced efficiency, cost-effectiveness, reliability and controllability over silicon based conventional DG-MOS and HEMT transistors.