A 2K×2K High Resistivity CCD

We present new results from the characterisation of a fully depleted 2048-row by 2048-column (2K×2K) CCD on high resistivity silicon. The CCD was fabricated at the Lawrence Berkeley National Laboratory (LBNL). This device represents a one hundred-fold increase in CCD size compared to devices previously made at LBNL. The large CCD size allows us to do accurate charge transfer efficiency measurements. A two-layer antireflection coating is modelled and compared with laboratory measurements of both quantum efficiency and reflectivity.