Imaging of the (Mn2+3d5 + Hole) Complex in GaAs by Cross‐Sectional Scanning Tunneling Microscopy

We present results on the direct spatial mapping of the wave‐function of a hole bound to a Mn acceptor in GaAs. To investigate individual Mn dopants at the atomic scale in both ionized and neutral configurations, we used a room temperature cross‐sectional scanning tunneling microscope (X‐STM). We found that in the neutral configuration manganese manifests itself as an anisotropic cross‐like feature. We attribute this feature to a hole weakly bound to the Mn ion forming the (Mn2+3d5 + hole) complex.