Infrared light emitting diode

The present invention discloses an infrared light emitting diode, comprising a top-down P-type ohmic electrode, a contact layer, a P-type clad layer, an active layer, N-type clad layer, a buffer layer, GaAs substrate, N-type ohmic electrode characterized in that when using InxGa1-xAs as the N-type clad layer and a P-type clad layer, one or both, the advantage is the use of InxGa1-xAs layer as a cover, the material of a low resistance value can effectively enhance the diffusion current, and reduces the voltage and improving luminous efficiency.