Donor wavefunctions in silicon by the ENDOR technique

Abstract The Electron Nuclear DOuble Resonance (ENDOR) method was applied to the investigation of the ground state donor wavefunction in silicon. The method enables one to determine the hyperfine interaction of the donor electron with the Si 29 nuclei situated at different lattice sites with respect to the impurity. This gives one a value for the square of the electronic wavefunction at different lattice points. Both the isotropic and anisotropic h.f. interactions for arsenic, phosphorus and antimony impurities were determined. By comparing the experimental results with the theory of K ohn and L uttinger one obtains for the value of the conduction band minimum in silicon k 0 k max = 0.85 ± 0.03 .