Photoelectric conversion element and method of fabricating same

Provided is a photoelectric conversion element comprising a photoelectric conversion layer wherein morphology in the film thickness direction is controlled with an inexpensive technique, with which high photoelectric conversion efficiency is demonstrated, and with which photoelectric conversion performance is superior. A photoelectric conversion element (1) has a photoelectric conversion layer (5), including n-type organic semiconductors (4) and p-type polymer semiconductor crystal parts (2) and non-crystal parts (3), which is sandwiched between positive electrode and negative electrode layers (6), all upon a substrate (7). The relation between a half-value width (X) in which a line profile corresponding to a direction which is perpendicular to the substrate (7) is fitted with a Gaussian function of an image in which a morphology image of a cross-section of the photoelectric conversion layer (5) is Fourier transformed, and a half-value width (Y) in which a line profile corresponding to a direction which is horizontal in the substrate (7) is fitted with the Gaussian function, is denoted as 0.1≤Y/X≤0.7.