High Performance 42nm Gate Length CMOS Device

20~ 50nm CMOS device structure and the key technologies are investigated. By these innovations of technologies, high performance 42nm gate length CMOS devices and 48nm gate 1ength CMOS ring oscillators are fabricated successfully. At supply power voltage VDD of 1. 5V, the drive current lon of 42nm gate length CMOS are 745pA/pm for NMOS and 530pA/pm for PMOS at off-state leakage loff of 3. 5 nA/pm for NMOS and 15pA/pm for PMOS. The Sub-threshold slope of 72mV/ Dec and DIBL of 34mV/V for NMOS and Sub-thresho1d S1ope of 82mV/Dec and DIBL of 57mV/V for PMOS are obtained. 48nm gate length 57 Stage CMOS ring oscillator exhibits per-stage delay of 19. 9ps at 1. 5V.