Magnetic-field-assisted silicon micro-nano processing technology and equipment

The invention discloses a magnetic-field-assisted silicon micro-nano processing technology. The technology comprises the specific steps that: photoresist is coated on a monocrystal silicon wafer by a spin-coating method; a pattern with a required micro-nano scale is obtained by photo-etching; a metal film A, a metal film B, and a metal film A are sequentially plated on the surface of the obtained sample, wherein the metal film A is gold or silver, and the metal film B is iron; the monocrystal silicon wafer is subjected to metal-catalytic etching by using an etching agent of a mixed solution of HF and H2O2, wherein the reaction is carried out in a magnetic environment with adjustable intensity and direction; the photoresist and residual metal film are removed, and the wafer is cleaned. The invention also provides equipment for realizing the technology. The equipment comprises a liquid storing apparatus, a solution flow rate controlling apparatus, a reaction sealing cavity, an electromagnetic field controlling system, and a computer controlling system. According to the invention, a magnetic field is introduced in the etching reaction. With the attractive effect of the magnetic field to the iron film, the metal film is induced to move along the magnetic filed direction. The etching reaction is carried out along the magnetic field direction, such that the etching direction is controllable.