SELF-INDUCED LATERALLY MODULATED GAINP/INASP STRUCTURE GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

Zero‐net strained multilayer alternating tensile GaInP and compressive InAsP have been grown on (001)InP by metal‐organic vapor‐phase epitaxy. A structural analysis using transmission electron microscopy (TEM) is reported. A remarkably regular laterally modulated structure has been observed. GaInP‐ and InAsP‐rich vertical zones alternate with a periodicity of 0.28 μm along the lateral [110] direction, thus balancing the mismatch along the [110] rather than the [001] growth direction. TEM experiments suggest that each vertical zone is partially elastically relaxed.