Examination of pressure effect on the electronic structure of p-type Th3As4 by compensation point method

Abstract Effects of pressure up to 1.3 GPa on the thermopower sign inversion temperature (TSIT) and on the electrical resistivity of p -type Th 3 As 4 have been examined. It is found that both the forbidden gap, E g , as well as an activation energy of acceptors, E a , decrease linearly with pressure: ∂E g /∂p = - 17.7 meV/GPa , ∂E a /∂p = - 14 meV/GPa . It is also shown that the examination of the pressure dependence of the TSIT is an easy and sensitive method to study the effect of pressure on the electronic structure of p -type semiconductors.