Off-state and on-state breakdown of GaAs MESFET, PHEMT and Power PHEMT

We present a comparison of the breakdown loci of a MESFET, PHEMT and Power PHEMT. It is based on the study of the correlation between breakdown loci and device output characteristics. This study aims at performing a technology choice for amplifier design operating in non linear conditions with operating level close to the maximum operating conditions of the transistor. We found that the MESFET is the best candidate for circuits operating in overdrive conditions as it presents abrupt on-state breakdown voltage loci and the highest breakdown voltage. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)