Optimizing the dielectric constant and dissipation factor of PVA/n-Si Schottky diode

Abstract In this article, we map the dielectric properties of manufactured metal-polymer-semiconductor (MPS) Schottky barrier diode consisting of aluminum (Al), polyvinyl alcohol (PVA), and n-type silicon (n-Si), under different conditions of applied frequency (1 Hz–20 MHz), voltage (-2–2 volts), and temperature (-50–90 °C). By tuning all these parameters, we could activate all possible polarization modes at the PVA/Si interface and reach tremendous values for the dielectric constant of our sample (e′ >3000) with a conveniently low dissipation factor (tan δ ≥ 30 °C. These promising values are motivating for using Al/PVA/n-Si Scottky diode structure in innovative energy storage applications.