Design and Characterisation of High-Performance 0.13 μm NMOS Devices

We report on the design, manufacturing and performance of NMOS transistors optimised or an effective channel length of 0.13 μm. The influence of the gate oxide thickness and pocket implants to device performance was studied. Pocket implanted devices show a high drive current (530 μA/μm at 1.8 V) and low off-current, with good suppression of short channel effects and a lifetime of 10 years at 1.8 V.